ISSN 0236-235X (P)
ISSN 2311-2735 (E)

Journal influence

Higher Attestation Commission (VAK) - К1 quartile
Russian Science Citation Index (RSCI)


Next issue

Publication date:
16 September 2023

Keyword: double gate field nanotransistor

  1. Simulation of potential distribution in the operation area of the
  2. Authors: Масальский Н.В.

  3. Temperature model of potential distribution for non-uniform doping nanotransistors with the silicon-on-insulator structure
  4. Authors: Масальский Н.В.