ISSN 0236-235X (P)
ISSN 2311-2735 (E)

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Higher Attestation Commission (VAK) - К1 quartile
Russian Science Citation Index (RSCI)

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Publication date:
16 June 2024

Articles of journal № 3 at 2018 year.

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Public date | Title | Authors

31. The system of statistical analysis and control of hydraulic unit vibration stability [№3 за 2018 год]
Authors: Klyachkin, V.N., Yu.E. Kuvayskova , Ivanova A.V.
Visitors: 4427
The system of vibration monitoring of a hydraulic unit includes indications of a distributed network of relative and absolute vibration intelligent sensors, as well as sensors for measuring the shaft rotation speed. These sensors are designed to work as a part of the hydraulic unit control system. The sensors are combined into one local network to transfer data on vibration parameters to the control system. The network operation mode during stationary operation of the unit can use multivariate statistical control algorithms in order to estimate vibration stability. These algorithms are similar to those used for controlling multiparameter technological processes. Such approach ensures early detection of process abnormalities using statistical methods and timely taking of control actions. Based on the conducted research and result analysis of vibration monitoring of the hydroelectric unit in the Krasnopolanskaya hydroelectric power station, there is a developed software system that provides monitoring of the vibration stability. The system in-cludes three subsystems: for visualization and grouping indicators, as well as for monitoring independent and correlated groups of indicators by stability criteria of the average level and the scattering the corresponding processes. In order to control independent in-dicators, the authors use Shewhart charts for mean values and standard deviations. When controlling correlated indicators, Hotelling charts are used to monitor the mean process level and a generalized variance chart for monitoring multidimensional scattering. The system ensures timely detection of possible abnormalities and prevents overranging of controlled indicators.

32. Temperature model of potential distribution for non-uniform doping nanotransistors with the silicon-on-insulator structure [№3 за 2018 год]
Author: Masalsky N.V.
Visitors: 6291
The paper discusses development of a 2D analytical temperature model of potential distribution in a work area of a double gate thin-film field nanotransistor with the silicon-on-the-insulator structure with a vertically non-uniform doping work area in the form of the Gaussian function. Double-gate field transistors with the silicon-on-the-insulator structure are the leading representatives of an element basis for a new scientific direction that is high-temperature microelectronics since they are ideal high-temperature devices. For a stationary temperature case, in parabolic approximation using a special function the authors have received an analytical solution for a 2D Poisson equation. They also numerically investigated temperature dependences of surface potential distribution on doping profile parameters in the range of temperatures from 200 K to 500 K. For the selected layout rules, variation of doping profile parameters gives an additional opportunity of controlling the key nanotransistor characteristics along with thickness of work area and gate oxide of a front lock, which is important when analyzing applicability of nanotransistor structures. The authors show that structures with steep doping profiles are more heat-resistant in comparison with homogeneously doping ones. In order to increase the upper bound of a temperature range by 100 K, it is necessary to increase the work area doping level by times. Using a perspective transistor architecture for double gate field nanotransistors with the structure silicon-on-the-insulator allows increasing thermal firmness of their key electrophysical characteristics in comparison with double-gate field transistors with homogeneously doping work area and with their volume analogs. The results of simulation are in close agreement with simulation data received using the ATLASTM software package, which is commercially available for 2D simulation of transistor structures.

33. The effectiveness of stage-by-stage use of securirty means crossing threat detection areas [№3 за 2018 год]
Authors: V.S. Kolomoitsev, V.A. Bogatyrev
Visitors: 5967
The paper investigates the ways of improving the efficiency of a secure access scheme “direct connection”. The scheme is based on choosing options for its construction, taking into account the phased use of various information security means and their integration into a cluster architecture system aimed at consolidating limited protection resources. Consol-idation of protection resources is carried out in order to achieve maximum security with minimum delays and system costs. The authors propose criteria for the effectiveness of information security systems aimed at increasing the probability of threat detection in the shortest time, taking into account its limitations. The proposed criteria take into account the average time of request stay in the system and the probability of threat detection and removal by an information security system. There is an assumption that the service time of each stage is a random value having exponential distribution. The paper proposes models of estimating the probability of detection and elimination of threats and delays based on the sequence of application of information security means in the nodes. The models take into account intersections of sets of threats detected by various means of information security. The authors show the possibility of implementing an adaptive strategy of consistent application of information security means to prevent threats to information security depending on changing intensity of incoming requests. There are some options of bundling nodes by a complete or partial set of available software or hardware-software means of information security.

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