ISSN 0236-235X (P)
ISSN 2311-2735 (E)

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Higher Attestation Commission (VAK) - К1 quartile
Russian Science Citation Index (RSCI)

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4
Publication date:
09 December 2024

Keyword: asymmetric front gate

  1. Potential distribution simulation for a dual-gate field silicon on insulator nanotransistor with an asymmetric gate
  2. Authors: Масальский Н.В.